M. Mitrano, G. Cotugno, S. R. Clark, R. Singla, S. Kaiser, J. Stähler, R. Beyer, M. Dressel, L. Baldassarre, D. Nicoletti, A. Perucchi, T. Hasegawa, H. Okamoto, D. Jaksch, and A. Cavalleri:
Phys. Rev. Lett. 112 (11), 117801 (2014), pp. 5;
We measure the ultrafast recombination of photo-excited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET-F2TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.
The original publication is available by link DOI: 10.1103/PhysRevLett.112.117801
A preliminary version with similar content has been published in 2013 at arXiv:1308.2189 [cond-mat.str-el] !