The NIST Surface Structure Database (SSD) represents a joint effort of the Standard Reference Data Group at the National Institute of Standards and Technology (NIST ), Washington and of three main investigators, P. R. Watson (OSU Corvallis), M. A. Van Hove (CityU of Hong Kong, formerly UC Davis and LBNL), and K. Hermann (Fritz-Haber-Institut Berlin).

NIST SSD collects all experimentally solved surface structures in searchable electronic form. The software is updated regularly and is distributed by NIST. At present version 5 (structures up to start 2004) is available. For detailed information consult the SSD homepage at NIST.

NIST SSD comes with an integrated visualizer and graphical analyzer (SURVIS) which offers various graphical and numerical output formats thus interfacing with separate visualization and postprocessing software. The following pictures were output from SSD / SURVIS and postprocessed with BALSAC for adaptation to WWW. Note that the original SSD output (without postprocessing) yields identical structural features and similar visual results.

You may use any of the pictures shown here as you please, with proper reference: for publications "WWW Picture gallery based on in the Surface Structure Database (SSD, NIST Standard Reference Database 42) by P. R. Watson, M. A. Van Hove, K. Hermann. The pictures have been prepared from SSD output and postprocessed with BALSAC by K. Hermann", or for overhead and other projection "from NIST Surface Structure Database".

The pictures, which cover only part of the database contents, are grouped in the following categories:

• Clean metal substrates
• Metal substrates with atomic adsorbates
• Metal substrates with molecular adsorbates
• Metal substrates with metal and rare gas films
• Clean elemental semiconductor substrates
• Elemental semiconductor substrates with atomic adsorbates
• Elemental semiconductor substrates with molecular adsorbates
• Clean compound semiconductor substrates
• Compound semiconductor substrates with atomic adsorbates
• Semiconductor interfaces
• Metallic alloy surfaces
• Clean oxide, bromide, carbide substrates
• Oxide, bromide, carbide substrates with adsorbates
• Other clean substrates
• Other substrates with adsorbates

fcc(111)-(1x1)

fcc(100)-(1x1)

Ir(100)-(1x5)

fcc(110)-(1x1)

fcc(110)-(1x2) missing row

fcc(110)-(1x3) facets I

fcc(110)-(1x3) facets II

fcc(311)-(1x1)

fcc(210)-(1x1)

fcc(331)-(1x1)

bcc(110)-(1x1)

bcc(100)-(1x1)

W(100)-c(2x2)

bcc(100)-(1x1) disordered

bcc(111)-(1x1)

bcc(210)-(1x1)

bcc(211)-(1x1)

bcc(310)-(1x1)

hcp(0001)-(1x1)

hcp(10-10)-(1x1)

hcp(11-20)-(1x1)

1. fcc(111) high symmetry adsorbate sites
2. fcc(111)+(1x1)-Ad
3. fcc(111)+(r3xr3)R30-Ad; ~-2Ad
4. fcc(111)+p(2x2)-Ad; ~-2Ad
5. Al(111)+(1x1)-O (subsurface)
6. fcc(111)+(r3xr3)R30-Ad; ~+(2x2)-Ad (substitutional)
7. fcc(100) adsorbate sites
8. fcc(100)+c(2x2)-Ad
9. fcc(100)+p(2x2)-Ad; ~+c(4x2)-Ad
10. Cu(100)+c(5r2xr2)R45-3Pb
11. fcc(100)+p4g(2x2)-2Ad
12. fcc(100)+c(2x2)-Ad (substitutional)
13. Cu(100)+(2r2xr2)R45-2O
14. fcc(110) high symmetry adsorbate sites
15. fcc(110)+c(2x2)-Ad
16. Rh(110)+(1x1)-2H; Pd(110)+(2x1)-2H
17. Rh(110)+(1x3)-H; Rh(110)+(1x2)-3H
18. fcc(110)+(2x1)-O missing/added row
19. Ir(110)+(2x2)-2S
20. Au(110)+c(2x2)-K (substitutional)
21. Cu(410)+(1x1)-O
22. Cu(410)+(1x1)-2O
23. bcc(110) high symmetry adsorbate sites
24. bcc(110)+(2x1)-Ad
25. Fe(110)+(3x1)-2H
26. Fe(110)+p(2x2)-S
27. bcc(100) high symmetry adsorbate sites
28. bcc(100)+(1x1)-Ad
29. bcc(100)+c(2x2)-Ad; ~+(1x1)-2Ad
30. W(100)+O disordered (simulated as 2x2)
31. W(100)+p(2x1)-disordered O
32. Ta(100)+(1x3)-O
33. Fe(211)+(2x1)-O
34. hcp(0001) high symmetry adsorbate sites
35. Ru(0001)+(1x1)-H
36. Ru(0001)+p(2x1)-O; ~+p(2x2)-O
37. hcp(0001)+(1x1)-Ad (interstitial)
38. Zr(0001)+(2x2)-O (fcc, interstitial)
39. Co(10-10)+c(2x2)-K

1. fcc(111)+CO high symmetry sites
2. Pt(111)+c(4x2)-2CO
3. Rh(111)+(2x2)-3CO
4. Ni(111)+(2x2)-C2H2
5. fcc(111)+C2H3 high symmetry sites
6. Rh(111)+c(4x2)-C2H3+CO
7. Pt(111)+C6H6 disordered
8. Pt(111)+(2r3x4)rect-2C6H6+4CO
9. Rh(111)+c(2r3x4)rect-C6H6+CO
10. fcc(111)+(3x3)-C6H6+2CO
11. fcc(100)+CO high symmetry sites
12. Pd(100)+(2r2xr2)R45-2CO
13. Cu(100)+C2H2 disordered
14. Cu(100)+C2H4 disordered
15. Cu(100)+HCO2 disordered
16. Cu(100)+CH3O disordered
17. Ni(100)+C6SH5 disordered
18. Ni(110)+p(2x1)-2CO
19. Cu(110)+HCO2 disordered
20. Ru(0001)+(r3xr3)R30-CO

1. fcc(111)+(1x1)-1Me
2. Ag(111)+Xe incommensurate
3. fcc(100)+(1x1)-nMe (e.g. n = 3)
4. Ni(100)+Ag(111) multilayers
5. fcc(110)+(1x1)-1Me
6. fcc(100)+(1x1)-nMe (e.g. n = 3)
7. hcp(0001)+(1x1)-nMe (e.g. n = 3)

1. Si(111)-(1x1)
2. Si(111)-(2x1)
3. Si(111)-(r3xr3)R30
4. Si(111)-(7x7)
5. Ge(111)-c(2x8)
6. Si(100)-(1x1)
7. Si(100)-(2x1)
8. Si(100)-c(4x2)

1. diamond(111) high symmetry adsorbate sites
2. Si(111)+(r3xr3)R30-Al
3. Ge(111)+(2x2)-S
4. Si(111)+(1x1)-Cl
5. Si(111)+(r3xr3)R30-Bi (1 ML)
6. Si(111)+(r3xr3)R30-B
7. Si(111)+(1x1)-As
8. Si(111)+(r3xr3)R30-Bi
9. diamond(100) high symmetry adsorbate sites
10. Si(100)+Co (0.4ML)
11. Ge(100)+(2x1)-S
12. Si(100)+(2x1)-Na
13. Si(100)+(2x1)-2K
14. Si(100)+(2x1)-2Sb
15. Ge(111)+(r3xr3)R30-4Pb (4/3 ML)

1. Ge(111)+(1x1)-PHx

1. GaAs(110)-(1x1)
2. GaAs(111)-(2x2)
3. SiC(100)-c(2x2) (C2H4 exposed)
4. SiC(100)-c(2x2) (Si sublimation)
5. SiC(100)-p(2x1)
6. GaAs(311)-(1x1) As termination
7. GaAs(311)-(1x1) Ga termination
8. ZnO(0001)-(1x1)
9. ZnO(10-10)-(1x1)
10. ZnO(11-20)-(1x1)

1. GaAs(110)+(1x1)-2Sb
2. GaAs(110)+(1x1)-Al/2Al (low/medium coverage)

1. Si(111)+(1x1)-CoSi2(111) interface I
2. Si(111)+(1x1)-CoSi2(111) interface II
3. Si(111)+(1x1)-NiSi2(111) interface I
4. Si(111)+(1x1)-NiSi2(111) interface II

1. Ni3Al(111)-(1x1)
2. Pt0.1Ni0.9(111)-(1x1)
3. Pt0.5Ni0.5(111)-(1x1)
4. Pt0.78Ni0.22(111)-(1x1)
5. Pt0.8Fe0.2(111)-(1x1)
6. a-Cu(111)+16%Al-(r3xr3)R30
7. Ni3Al(100)-(1x1)
8. AuCu3(100) disordered
9. Pt0.1Ni0.9(100)-(1x1)
10. Ni3Al(110)-(1x1)
11. Pt0.1Ni0.9(110)-(1x1)
12. Pt0.5Ni0.5(110)-(1x1)
13. Pt0.8Fe0.2(110)-(1x2)
14. Cu0.85Pd0.15(110)-(2x1)
15. NiAl(110)-(1x1)
16. NiAl(100)-(1x1)
17. NiAl(111)-(1x1) Al/Ni terminated
18. CoSi2(111)-(1x1)
19. CoSi2(111)-(1x1) Si-rich
20. NiSi2(100)-(1x1)
21. NiSi2(100)-(1x1) Si-rich

1. CoO(100)-(1x1)
2. CoO(111)-(1x1)
3. AgBr(111)-(2x1)
4. Na2O(111)-(1x1)
5. TiO2(100)-(3x1)
6. SrTiO3(100)-(1x1) O-Ti-O termination
7. SrTiO3(100)-(1x1) Sr-O termination

1. TiC(111)+(r3xr3)R30-O

1. C(0001)-(1x1) graphite
2. Te(10-10)-(1x1)
3. MoS2(0001)-(1x1)
4. NbSe2(0001)-(1x1)
5. TiSe2(0001)-(1x1)

1. C(0001)+(2x2)-Cs
2. C(0001)+(r3xr3)R30-Cs
3. C(0001)+1K disordered underlayer
4. C(0001)+2K disordered underlayers
5. C(111)+(1x1)-H diamond

BALSAC picture gallery

K. Hermann's official home page