Fritz-Haber-Institut der Max-Planck-Gesellschaft  Department of Physical Chemistry
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Prof. Karsten Horn PhD

Building:  D / 1st floor, room 1.06

Tel:  030 / 8413-5640
        0172 812 8025
Fax:  030 / 8413-5603 

E-mail:  hornfmpg

2015 · 2014 · 2013 · 2012 · 2011 · 2010 · 2009 · 2008 · 2007 · 2006 · 2005 · 2004 · 2003 · 2002 · 2001 · 2000 · 1999–90 · 1989–80 · 1979–73

  • Andrew L. Walter, Hasan Sahin, Jun Kang, Ki-Joon Jeon, Aaron Bostwick, Seyda Horzum, Luca Moreschini, Young Jun Chang, Francois M. Peeters, Karsten Horn, Eli Rotenberg: A new family of Graphene-based organic semiconductors: An investigation of photon induced electronic structure manipulation in half-fluorinated graphene. Phys. Rev. B 93, 075439(2016).
2015 2014 2013 2012 2011 2010
  • M. Weser, Y. Rehder, K. Horn, M. Sicot, M. Fonin, A. B. Preobrajenski, E. N. Voloshina, E. Goering, and Yu. S. Dedkov, Induced magnetism of carbon atoms at the graphene/Ni(111) interface, Appl. Phys. Lett. 96, 012504 (2010).
  • J. L. McChesney, A Bostwick, T. Ohta, Th. Seyller, K. Horn, J. González, and Eli Rotenberg Extended van Hove Singularity and Superconducting Instability in Doped Graphene. Physical Review Letters 104, 136803(2010).
  • C. Enderlein, Y. S. Kim, A. Bostwick, E. Rotenberg, and K. Horn, The formation of an energy gap in graphene on ruthenium by controlling the interface, New J. Phys. 12, 033014 (2010).
  • J. H. Dil, B. Huelsen, T. U. Kampen, P. Kratzer, and K. Horn, Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon, J. Phys.: Condens. Matter 22, 135008 (2010).
  • J. L. McChesney, A. Bostwick, T. Ohta, Th. Seyller, K. Horn, J. Gonzalez, and E. Rotenberg, Extended van Hove singularity and superconducting instability in doped graphene, Phys. Rev. Lett. 104, 136803 (2010).
  • J. Martinez-Blanco, M. Klingsporn, and K. Horn, Selective adsorption of coronene on Si(111)-(7 x 7) , Surf. Sci. 604, 523 (2010).
  • A. Bostwick, F. Speck, Th. Seyller, K. Horn, M. Polini, R. Asgari, A. H. MacDonald, Eli Rotenberg, Observation of plasmarons in quasi-freestanding doped graphene, Science 328, 999 (2010).
  • Y. J. Chang, A. Bostwick, Y. S. Kim, K. Horn, and E. Rotenberg, Structure and correlation effects in semiconducting SrTiO3, Phys. Rev. B 81, 235109 (2010).
  • A. Bostwick, T. Ohta, J. L. McChesney, K. V. Emtsev, F. Speck, Th. Seyller, K. Horn, S. D. Kevan, and E. Rotenberg, The interaction of quasi-particles in graphene with chemical dopants, New J. Phys. 12, 125014 (2010).
  • Y. J. Chang, A. Bostwick, Y. S. Kim, K. Horn, and E. Rotenberg, "Structure and correlation effects in semiconducting SrTiO3", Phys. Rev. B 81, 235109 (2010).
  • K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Rˆhrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and Th. Seyller, Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nature Materials 8, 203 (2009).
  • A. K. Shukla, R. S. Dhaka, S. W. D’Souza, Sanjay Singh, D. Wu, T. A. Lograsso, M. Krajčí, J. Hafner, K. Horn, and S. R. Barman, Quasiperiodic layers of free-electron metals studied using electron diffraction, Phys. Rev. B 79, 134206 (2009).
  • T. Filleter, J. L. McChesney, A. Bostwick, E. Rotenberg, K. V. Emtsev, Th. Seyller, K. Horn, and R. Bennewitz, Friction and dissipation in epitaxial graphene films, Phys. Rev. Lett. 102, 086102 (2009).
  • Thomas Seyller, Aaron Bostwick, Konstantin V. Emtsev, Karsten Horn, Lothar Ley, Jessica L. McChesney, Taisuke Ohta, John D. Riley, Eli Rotenberg, and F. Speck, Epitaxial graphene: A new material, Phys. Stat. Sol. (b) 245, 1436 (2008).
  • M. Moreno, A. Kumar, M. Tallarida, A. Ney, K. H. Ploog, K. Horn, Electronic signature of MnAs phases in bare and buried films grown on GaAs(001), J. Vac. Sci. Technol. B 26, 1530 (2008).
  • Eli Rotenberg, Aaron Bostwick, Taisuke Ohta, Jessica L. McChesney, Thomas Seyller, and Karsten Horn, Origin of the energy bandgap in epitaxial graphene, Nature Materials 7, 258(2008) (comment).
  • C. Tegenkamp, T. Ohta, J. L. McChesney, H. Dil, E. Rotenberg, H. Pfnür, and K. Horn, Coupled Pb chains on Si(557): Origin of one-dimensional conductance, Phys. Rev. Lett. 100, 076802 (2008).
  • M. Moreno, A. Kumar, M. Tallarida, K. Horn, A. Ney, K. H. Ploog, Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study, Appl. Phys. Lett. 92, 084103 (2008).
  • Taisuke Ohta, Farid El Gabaly, Aaron Bostwick, Jessica L. McChesney, Konstantin V. Emtsev, Andreas K. Schmid, Thomas Seyller, Karsten Horn, Eli Rotenberg, Morphology of graphene thin film growth on SiC(0001), New J. Phys. 10, 023034 (2007).
  • A.Bostwick, T.Ohta, J.L.McChesney, Th.Seyller, K.Horn, E.Rotenberg, Band structure and many body effects in graphene, European Physical Journal — Special Topics 148, 5 (2007).
  • V.W. Brar, Y. Zhang, Y.Yayon, A. Bostwick, T. Ohta, J. L. McChesney, K.Horn, E. Rotenberg, M. F. Crommie, Scanning tunneling spectroscopy of the inhomogeneous electronic structure in monolayer and bilayer graphene on SiC, Appl. Phys. Lett. 91, 122102 (2007).
  • A. Bostwick, T. Ohta, J. L. McChesney, Konstantin V. Emtsev, Thomas Seyller, Karsten Horn, Eli Rotenberg, Symmetry Breaking in Few Layer Graphene Films, New Journal of Physics 9, 385(2007).
  • M.N.Piancastelli, Z.Bao, F.Hennies, O.Travnikova, D.Céolin, Th.Kampen, and K.Horn Electronic and geometric structure of methyl oxirane adsorbed on Si(100) 2 x 1, Appl. Surf. Sci. 254, 108 (2007).
  • T.U.Kampen, J.W.Kim, Ph.M.Schmidt, J.H.Dil, and K.Horn, Circular Dichroism of adsorbed chiral molecules, J. El. Spec. Relat.Phenom. 156, (2007).
  • P.S. Kirchmann, M. Wolf, J.H. Dil, K. Horn, U. Bovensiepen, Quantum size effects in Pb/Si(111) investigated by laser-induced photoemission, Phys. Rev. B 76, 075406 (2007).
  • M. Ruiz-Oses, T. Kampen, N. Gonzalez-Lakunza, I. Silanes, P. M. Schmidt, A. Gourdon, A. Arnau, K. Horn, and J. E. Ortega, Spectroscopic fingerprints of amine and imide functional groups in supramolecular monolayers, Chem. Phys. Chem 8, 1722 (2007).
  • Aaron Bostwick, Taisuke Ohta, Jessica L. McChesney, Thomas Seyller, Karsten Horn, Eli Rotenberg, Renormalization of graphene bands by many-body interactions, Solid State Commun. 143, 63 (2007).
  • A. Bostwick, K.V. Emtsev, K. Horn, E. Huwald, L. Ley, J.L.McChesney, T. Ohta, J.Riley, E. Rotenberg, F. Speck, and Th. Seyller, Photoemission studies of graphene on SiC: growth, interface, and electronic structure, Appl. Phys. A, in press
  • Ph.Schmidt, T.U.Kampen, J.H.Dil, and K.Horn, Conformaional Isomers of Stilbene on Si(100), Surf. Sci. 601, 1775 (2007).
  • M. Cranney, G. Comtet, G. Dujardin,, J.W. Kim, T. Kampen, K. Horn, M. Mamatkulov, L. Stauffer and Ph. Sonnet, Electronic structure of biphenyl on Si(100), Phys. Rev. B 76, 075324 (2007).
  • A. K. Shukla, P. Krüger, R. S. Dhaka, D. I. Sayago, K. Horn, and S. R. Barman, Understanding the 2p core-level spectra of manganese: Photoelectron spectroscopy experiments and Anderson impurity model calculations, Phys. Rev. B 75, 235419 (2007).
  • Taisuke Ohta, Aaron Bostwick, Thomas Seyller, J.L.McChesney, Karsten Horn, and Eli Rotenberg, Interlayer interaction and electron screening in multilayer graphene, Phys. Rev. Lett. 98, 206802 (2007).
  • J.I. Pascual, C. Corriol, G. Ceballos, H.-P. Rust, K. Horn, J. M. Pitarke, P. M. Echenique and A. Arnau, Role of electric field in surface electron dynamics above the vacuum level, Phys. Rev. B 75, 165326 (2007).
  • Aaron Bostwick, Taisuke Ohta, Thomas Seyller, Karsten Horn, and Eli Rotenberg, Quasiparticle dynamics in graphene, Nature Phys. 3, 36 (2007).
  • J.W.Kim, T.U.Kampen, K.Horn, M.-C.Jung, Thermal decomposition of ehtylene on Si(111): formation of the Si(111)√3 x √3 carbon structure, Surf. Sci. 601, 694 (2007).
  • T.Ohta, A.Bostwick, Th. Seyller, K.Horn, E.Rotenberg, Controlling the Electronic Structure of Bilayer Graphene, Science 313, 951-954 (2006)
  • P. Moras, W. Theis, L. Ferrari, S. Gardonio, J. Fujii, K. Horn, and C. Carbone, Quasicrystalline electronic states of a one-dimensionally modulated Ag film, Phys. Rev. Lett. 96,156401 (2006)
  • A.K.Shukla, R.S.Dhaka,C.Biswas,S.Banik,S.R.Barman,K. Horn, Ph.Ebert,K.Urban, Growth and electronic structures of alkali metal adlayers on icosahedral Al70.5Pd21Mn8.5, Phys. Rev. B 73, 054432 (2006)
  • J. I. Pascual, A. Dick, M. Hansmann, H.-P. Rust, J.Neugebauer, and K. Horn, Bulk electronic structure of metals resolved with scanning tunneling microscopy, Phys. Rev. Lett. 96, 046801 (2006).
  • K. Horn, W.Theis, J.J.Paggel, S.R. Barman,E. Rotenberg, Ph. Ebert and K. Urban, Core and valence level photoemission and photoabsorption study of icosahedral Al-Pd-Mn quasicrystals, J.Phys. Condens.Matter 18,435 (2006)
  • J.H. Dil, J.W. Kim, Th. Kampen, K. Horn, A.R.H.F. Ettema, Electron localisation in metallic quantum wells: Pb versus In on Si(111), Phys. Rev. B (Rapid Comm.) B73, 161308 (2006).
  • J. W. Kim, M. Carbone, J. H. Dil, M. Tallarida, R. Flammini, M. P. Casaletto, K. Horn, and M. N. Piancastelli, Atom-specific identification of adsorbed chiral molecules by photoemission, Phys. Rev. Lett. 95, 107601 (2005).
  • J.H. Dil, J.W. Kim, Th. Kampen, K. Horn, A.R.H.F. Ettema, Electron localisation in metallic quantum wells: Pb versus In on Si(111), Phys. Rev. B (Rapid Comm.) B73, 161308 (2006).
  • M.P.Casaletto, M.Carbone, M.N.Piancastelli, K.Horn, K.Weiss, and R.Zanoni, A high resolution photoemission study of phenol adsorption on Si(100), Surface Science 582, 42 (2005).
  • J. I. Pascual, G. Bihlmayer, Yu.M. Koroteev, H.-P. Rust, G. Ceballos, M. Hansmann, K. Horn, E.V. Chulkov, S. Blügel, P.M. Echenique, and Ph. Hofmann, Role of spin in quasiparticle interference,Phys. Rev. Lett. 93, 196802(2004).
  • K.Horn, Charging atoms — one by one, Science 305, 483(2004) (Perspective Comment).
  • J.H. Dil, J.W. Kim, S. Gokhale, M. Tallarida and K. Horn, Self-organization of Pb thin films on Cu(111) induced by quantum size effects: An angle-resolved photoemission study, Phys. Rev. B 70, 045405(2004).
  • J.W.Kim, M.Carbone, M.Tallarida, J.H.Dil, M.P.Casaletto, R.Flamini, and M.N.Piancastelli, Adsorption of 2,3 butanediol on Si(100), Surface Science 559, 179(2004).
  • S.R.Barman, C.Biswas, and K.Horn, Collective excitations on silver surfaces studied by photoyield spectroscopy, Surface Science 566-568,538(2004).
  • U.Starke, M.Tallarida, A.Kumar, K.Horn, L.Seifahrt, und L.Kipp, Reconstruction of cleaved 6H-SiC surfaces, Silicon Carbide and Related Materials 2003, Mat.Sci. Forum 457-460, 391(2004).
  • A.Kumar, M.Tallarida, M.Hansmann U.Starke, K.Horn, Thin manganese films on Si(111)-(7 x 7): electronic structure and strain in silicide formation, J. Phys. D: Appl. Phys. 37,1083 (2004).
  • S.R.Barman, C.Biswas, and K.Horn, Electronic excitations on silver surfaces, Phys. Rev. B 69, 045413 (2004).
  • Jin-Cheng Zheng, C.H.A. Huan, and A.T.S. Wee, M.A. Van Hove, C.S. Fadley, F.J. Shi, E. Rotenberg, S.R. Barman, J.J. Paggel, K. Horn, Ph. Ebert and K. Urban, Atomic Scale Structure of the 5-fold Surface of an AlPdMn Quasicrystal: a Quantitative X-Ray Photoelectron Diffraction Analysis, Phys. Rev. B 69, 134107 (2004).
  • J.J.Paggel, Ch.Weindel, K.Horn, W.Mannstadt, D.Fick, Influence of bulk doping type on Li adsorption on Si(111)-(7 x 7), Phys. Rev. B 69, 035310(2004).
  • M. Hansmann, J. I. Pascual, G. Ceballos, H.-P. Rust, K. Horn, Scanning tunneling spectroscopy study of Cu(554): Confinement and dimensionality at a stepped surface Phys. Rev. B 67 , 121409 (2003).
  • Ph.Ebert, M.Yurechko, F.Kluge, K.Horn, K.Urban, Cleavage surfaces of quasicrystals in “Quasicrystals, Structure and Physical Properties”, ed. H.-R. Trebin, Wiley-VCH, Weinheim, 2003, p. 572-597.
  • W.Theis, E.Rotenberg, K.Franke, K.Horn, Electronic structure in quasicrystals and approximants in “Quasicrystals, Structure and Physical Properties”, ed. H.-R. Trebin, Wiley-VCH, Weinheim, 2003,p.615-621.
  • L.Aballe, C.Rogero, K.Horn, Quantum-size effects in ultrathin Mg films:electronicstructure and collective excitations, Surface Science 518 (2002)141.
  • J.Schaefer, S.C.Erwin, M.Hansmann, Z.Song, E.Rotenberg, S.D.Kevan, C.S.Hellberg, und K.Horn, Random Registry shifts in Quasi-one-dimensional Adsorbate Systems, Phys. Rev. B 67, 085411(2003).
  • W.Theis, E.Rotenberg, K.J.Franke, P.Gille, K.Horn, Electronic valence bands in decagonal AlNiCo, Phys. Rev.B 68, 104205 (2003).
  • K.Horn, M.Moreno, M.Alonso, M.Höricke, R.Hey, J.L.Sacedon, K.H.Ploog,Photoemission from Heterojunctions with intralayers: band offset changes vs. Band bending effects Vacuum 67, 115(2002).
  • E.Rotenberg, W.Theis, K.Horn,Model simulations of momentum-resolved photoemission from quasicrystals Proceedings of the Quasicrystal 2001 Conference, Sendai, Japan 2002, J.Alloys.Comp. 342, 348(2002).
  • L.Aballe, C.Rogero, und K.Horn,Quantum well states in ultrathin epitaxial Mg films on Si(111) Phys. Rev. B 65, 125319 (2002).
  • F.J.Palomares, M.Serrano, A.Ruiz, F.Soria, K.Horn, and M.Alonso,ARPES study of the surface states from Au/Ag(111): evolution with coverage and photon energy Surface Science 513,283-294(2002).
  • M.P.Casaletto, R.Zanoni, M.Carbone, M.N.Piancastelli, K.Weiss, L.Aballe, und K.Horn,Methanol adsorption on Si(100)-(2 x 1) investigated by high resolution photoemission Surface Science 505, 251-259(2002).
  • K.Horn, M.Moreno, M.Alonso, M.Höricke, R.Hey, J.L.Sacedon, K.H.Ploog, Photoemission from Heterojunctions with intralayers: band offset changes vs. Band bending effects Vacuum 67, 115(2002).
  • Z.Song, J.I.Pascual, H.Conrad, K.Horn, and H.-P.Rust, Surface states of d character imaged by scanning tunneling microscop, Surface Science 491, 39(2001).
  • M.P.Casaletto, R.Zanoni, M.Carbone, M.N.Piancastelli, K.Weiss, K.HornEthylene adsorption on Si(100)-(2 x 1): a high resolution photoemission study, Phys. Rev B 62, 17128 (2000).
  • L.Aballe, C.Rogero, P.Kratzer, S.Gokhale, and K.Horn, Probing interface electronic structure with overlayer quantum well resonances:Al/Si(111, Phys. Rev. Lett. 87, 156801(2001).
  • Ph.Ebert, P.Quadbeck, K.Urban, B.Henninger, K.Horn, G.Schwarz, J.Neugebauer, und M.Scheffler, Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors, Appl. Phys. Lett. 79, 2877 (2001).
  • L. Aballe, C. Rogero, S. Gokhale, S. Kulkarni und K. Horn, Quantum-well states in ultrathin aluminium films on Si(111), Surface Science, 482 - 485, 488(2001).
  • J.I.Pascual, Z.Song, J.Jackiw, K.Horn, und H.-P.Rust, Visualization of surface electronic structure: dispersion of surface states of Ag(110), Phys. Rev. B (Rapid Comm.) 63, 241103 (2001).
  • P.Häberle, W.Ibañez, S.R.Barman, Y.Q.Cai, und K.Horn, Photoexcited modes in thin alkali layers adsorbed on Al, Nucl. Instr. Methods B182, 102(2001).
  • Z.Song, J.I.Pascual, H.Conrad, K.Horn, und H.-P.Rust, Imaging Surface electronic Structure of NiAl(110) using low temperature scanning tunnelling microscopy, Appl. Phys. A72, S159 (2001).
  • D.A.Evans, H.J. Steiner R. Middleton, T.S. Jones,C. H. Chen, K. Horn, S. Park, Th. Kampen, D. Tenne, D.R.T. Zahn, A. Patchett, I. T. McGovern, In-situ monitoring of the growth of copper phthalocyanine films on InSb by organic molecular beam deposition, Appl. Surf. Sci, 175-176, 374 (2001).
  • S.R.Barman, P.Häberle, W.Ibañez, Y.Q.Cai, und K.Horn,Collective excitations in alkali metal films on Al, Phys. Rev. B 64, 195410 (2001).
  • S.R.Barman, P.Häberle, K.Horn, J.Maytorena, und A.Liebsch, Quantum well behavior without confining barrier observed via dynamically screened photon field, Phys. Rev. Lett. 86, 5108 (2001).
  • E.Rotenberg, W.Theis, K.Horn, and P.Gille, "Quasicrystalline valence bands in decagonal AlNiCo" Nature 406, 602 (2000).
  • M. Moreno, M. Alonso, M. Höricke, R. Hey, K. Horn, J.L. Sacedón, und K.Horn, "Photoemission results on intralayer insertion at III-V/III-V junctions: A critical appraisal of the different interpretations", J. Vac. Sci. Technol. B 14, 2128 (2000).
  • Ph.Ebert, K.Urban, L.Aballe, C.H.Chen, K.Horn, G.Schwarz, J.Neugebauer, und M.Scheffler,"Symmetric versus non-symmetric structure of the phosphorus vacancy on InP(110)", Phys. Rev. Lett., 84, 5816 (2000).
  • K.Horn, "Photoemission studies of barrier heights in metal-semiconductor interfaces and heterojunctions", Appl. Surf. Sci. 166,1 (2000).
  • K.Horn, "Electronic structure of semiconductor surfaces", in "Handbook of Surface Science" Vol. II, ed. K.Horn and M.Scheffler, Elsevier Amsterdam 2000.
  • M. Moreno, M. Alonso, J.L. Sacedón, M. Höricke, R. Hey, K. Horn, K.H. Ploog "Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements" Phys. Rev. B 61,16060 (2000).
  • D.Wolfframm, D.A.Evans, G.Neuhold, und K.Horn, "Gold and Silver contacts on ZnS(110)",J. Appl. Physics 87, 3905 (2000).
  • K.Horn und S.R.Barman ‘‘Photoemission study of electronic excitations at clean metal surfaces and thin films ‘‘Appl. Physics A 69, 519(1999).
  • P.Baumgärtel, J.J.Paggel, M.Hasselblatt, K.Horn, V.Fernandez, O.Schaff, J.H.Weaver, A.M.Bradshaw, D.P.Woodruff, E.Rotenberg, und J.Denlinger ‘‘Structure determination of the (√3 x √3)R30° boron phase on the Si(111) phase using photoelectron diffraction ‘‘Phys. Rev. B 59, 13 014(1999).
  • M.Carbone, M.N.Piancastelli, J.J.Paggel, Chr.Weindel, und K.Horn ‘‘A high resolution photoemission study of ethanol adsorption on Si(111)-(7 x 7) ‘‘Surface Science 412/413, 441(1998).
  • S.R.Barman,C.Stampfl, P.Häberle, und K.Horn ‘‘Dependence of collective excitations on surface electron density ‘‘Phys. Rev. B 61,12721 (2000).
  • S.R.Barman, P.Häberle, und K.Horn ‘‘Collective and single particle excitations in the photoyield spectrum of Al ‘‘Phys. Rev. B. (Rapid Comm.) 58, R4285(1998)
  • M.Moreno, J.L. Sacedón, , M. Alonso, , M. Höricke R. Hey, J. Avila,C.Asensio, K. Horn und K. Ploog ‘‘Si and Be intralayers at GaAs/AlAs heterojunctions: Doping effect ‘‘Phys.Rev. B 58, 13767 (1998).
  • S.R.Barman, S.-A.Ding, G.Neuhold, K.Horn, D.Wolfframm und D.A.Evans ‘‘Electronic structure of Zincblende ‘‘Phys.Rev. B 58, 7053 (1998).
  • M.Moreno, H.Yang, M.Höricke, M.Alonso, J.A.Martin-Gago, R.Hey, K.Horn, J.L.Sacedon, und K.Ploog ‘‘Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: polar vs. nonpolar interfaces ‘‘Phys.Rev. B 57, 12314(1998).
  • K.O.Magnusson, G.Neuhold, D.A.Evans, und K.Horn ‘‘Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence level states ‘‘Phys.Rev. B 57, 8945 (1998).
  • S.R.Barman, P.Häberle, K.Horn, H.Ishida und A.Liebsch ‘‘Photo-induced plasmon excitations in alkali metal overlayers ‘‘Phys. Rev. B 57, 6662(1998).
  • G.Neuhold, S.R.Barman, K.Horn, Ph.Ebert, und K.Urban ‘‘Enhanced Surface Density of States in Icosahedral Quasicrystals ‘‘Physical Review B 58, 734(1998).
  • Th.Chasse, D.A.Evans, und K.Horn ‘‘Growth Mode, Morphology, Schottky Barrier Formation, and Surface Photovoltage Effects in Sn Layers on GaP(110) ‘‘Appl. Surf. Sci. 115, 326(1997).
  • K.Horn ‘‘Photoelectron spectroscopy of Semiconductor Surfaces and Interfaces ‘‘Poverkhnost (Moskau) 4-5, 77(1997).
  • M.N.Piancastelli, J.J.Paggel, M.Hasselblatt, Ch. Weindel, und K.Horn ‘‘Quenching of Surface States of Si(111)-(7 x 7) by methanol adsorption: assignment of adsorbate binding sites ‘‘Phys.Rev. B(Rapid Comm.) 58, 12737(1997).
  • J.J.Paggel, G.Neuhold, H.Haak, und K.Horn ‘‘Morphology and electronic structure of thin Na films on Si(111)-(7 x 7) and Si(111)- ‘‘(1 x 1):Na ‘‘Surface Science 414, 221(1998).
  • G. Neuhold und K.Horn ‘‘Depopulation of the Ag(111) surface state by strain in epitaxial films ‘‘Physical Review Letters 78, 1327(1997).
  • S.-A.Ding, S.R.Barman, K.Horn, H.Yang, B.Yang, O.Brandt, und K.Ploog ‘‘Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron radiation photoemission spectroscopy ‘‘Applied Physics Letters 70, 2407(1997).
  • S.-A.Ding, S.R.Barman, V.L.Alperovich, K.Horn ‘‘Electronic structure of wurtzite GaN(0001) ‘‘Proceedings of the 23rd Int'l Conference on the Physics of Semiconductors, ed. M. Scheffler und R. Zimmermann (World Scientific, Singapore 1996), p. 525.
  • V.L.Alperovich, S.A.Ding, S.R.Barman, G.Neuhold, Th.Chassé, und K.Horn ‘‘Evidence of Mott-Hubbard and bipolaronic behaviour in photoemission spectra of alkali metal/GaAs(110) interfaces ‘‘Proceedings of the 23rd Int'l Conference on the Physics of Semiconductors, ed. M. Scheffler and R. Zimmermann (World Scientific, Singapore 1996), p. 923.
  • G.Neuhold, L.Bartels, J.J.Paggel, und K.Horn ‘‘Morphology of thin Ag films on GaAs(110): a LEED and STM study ‘‘Surface Sci. 376, 1 (1997).
  • S.-A.Ding G.Neuhold, J.H.Weaver, P.Häberle, K.Horn, O.Brandt, H.Yang, K.Ploog ‘‘Electronic structure of cubic gallium nitride films grown on GaAs ‘‘J.Vac.Sci.Technol A 14, 819 (1996).
  • D.Wolfframm, P.Bailey, D.A.Evans, G.Neuhold und K.Horn ‘‘Zinc Sulfide on GaP(110): characterization of epitaxial growth and electronic structure ‘‘J.Vac.Sci.Technol.A 14, 844(1996).
  • S.Schömann, K. Schmidt, H. Peisert, T. Chassé, und K. Horn ‘‘Electronic and surfactant effects of As interlayers at Ag/InP(110) interfaces ‘‘Surface Science 352-354, 855(1996).
  • G.Neuhold, Th.Chassé, J.J.Paggel, und K.Horn ‘‘Observation of Cs-induced states in the band gap of GaP(110): Alkali metal bonding and Fermi level pinning, ‘‘Phys.Rev.B 54, 8623 (1996).
  • R.Cimino, A.Giarante, K.Horn, und M.Pedio ‘‘Effects of barrier height inhomogeneity on semiconductor core level photoemission line shape ‘‘J.Elec.Spec. 76, 477(1995).
  • J.J.Paggel, W.Theis, und K.Horn ‘‘Si 2p core level spectroscopy: Si(111)-(7 x 7) and Si(111) -"1 x 1" ‘‘J.Elec.Spec., eingereicht.
  • D. Drews, A.Schneider, K.Horn, und D.R.T.Zahn ‘‘Raman monitoring of ternary compound formation: ZnSxSe1-x on GaAs(100) ‘‘J. Crystal Growth 159, 152(1996).
  • J.J.Paggel, G.Neuhold, H.Haak, und K.Horn ‘‘Scanning tunneling microscopy and photoemission study of an alkali-metal induced structural phase transition: Si(111)-(7x7) -> Si(111)-Na(3x1) ‘‘Phys.Rev. B 52, 5813 (1995).
  • Th.Chassé, G.Neuhold, J.J.Paggel, K.Horn ‘‘Evidence for surface derelaxation induced by metals on III-V compound semiconductors: Cs/InP(110) ‘‘Surface Science 331-333, 528(1995).
  • R.Cimino, A.Giarante, K.Horn, und M.Pedio ‘‘Effects of barrier height inhomogeneity on semiconductor core level photoemission line shape ‘‘Europhys.Lett. 32, 601 (1995).
  • Th.Chassé, G.Neuhold, K.Horn ‘‘Investigation of the As/InP(110) interface by high resolution photoemission ‘‘Surface Science 331-333, 511(1995).
  • G.Neuhold, K.Horn, K.O.Magnusson, D.A.Evans ‘‘Zincblende-CdSe on GaSb(110): Characterization of epitaxial growth and electronic structure ‘‘J.Vac.Sci.Technol. A 13, 666(1995).
  • R.Cimino, A.Giarante, K.Horn, und M.Pedio ‘‘Line broadening in semiconductor core level photoemission induced by barrier height inhomogeneity ‘‘Surface Science 331-333, 534(1995).
  • P. Link, G.Grobbel, M.Wörz, S.Bauer, H.Berger, W.Gebhardt, J.J.Paggel und K.Horn ‘‘Photoelectron Spectroscopy from Atomic Layers Epitaxy Grown ZnTe/ZnSe Heterostructures ‘‘J.Vac.Sci.Technol, A 13, 11(1995).
  • W. Theis und K.Horn ‘‘Surface Melting in Al(110) Observed in Core Level Photoemission ‘‘Phys.Rev.B51, 7157(1995).
  • H. Öfner, J.Kraft, R.Hofmann, S.L.Surnev, F.P.Netzer, J.J.Paggel, K.Horn ‘‘Electronic Structure and morphology of In-oxide-Si(111) structures ‘‘Surface Science 316, 112(1994).
  • H.Öfner, R.Hofmann, J.Kraft, F.P.Netzer, J.J.Paggel und K.Horn ‘‘Metal overlayer-induced charge transfer effects in thin SiO2-Si structures ‘‘Phys.Rev. B 50, 15 120(1994).
  • J.J.Paggel, W.Theis, K.Horn, C.Hellwig, Ch.Jung, und H.Petersen ‘‘Correlation of surface core levels and structural building blocks through high resolution core level spectroscopy: Si(111)-(7 x 7) ‘‘Phys.Rev.B 50, (Rapid Comm.) 18 686(1994).
  • D.A.Evans und K. Horn ‘‘Quantisation of valence states observed in small Ag islands on the GaAs(110) surface ‘‘Surface Sci.307-309, 321(1994).
  • Th. Chassé, J. Paggel , G. Neuhold , W. Theis, und K. Horn ‘‘Photoemission study of the Cs/GaP(110) interface at low temperatures ‘‘Surface Science 307-309, 295(1994).
  • U.Rossow, T.Werninghaus, D.R.T.Zahn, W.Richter, und K.Horn ‘‘Thin Epitaxial Films of Wide Gap II-VI compounds studied by Spectroscopic Ellipsometry ‘‘Thin Solid Films 233, 176(1993).
  • I.Jimenez, F.J.Palomares, J.Avila, M.T.Cuberes, F.Soria, J.L.Sacedon, und K.Horn ‘‘Thermal effects on the growth of SiO2 on GaAs(100) by reduction of native oxides ‘‘J.Vac.Sci.Technol. A 11, 1028(1993).
  • W.Theis und K.Horn ‘‘Temperature-dependent Line Broadening in Core Level Photoemission Spectra FromAluminium ‘‘Phys. Rev. B 47, (Rapid Commun.) 16060 (1993).
  • D.A.Evans, G.J.Lapeyre, und K.Horn ‘‘Overlayer-induced Valence States, and Evidence for Charge Transfer in Na/GaP(110) and Na/GaAs(110): a Comparative Study ‘‘J.Vac.Sci.Technol. B 11, 1492(1993).
  • J.J.Paggel, H.Haak, und K.Horn ‘‘Na adsorption on Si(111) -7 x 7 studied by Scanning Tunneling Microscopy and Photoemission ‘‘J.Vac.Sci.Technol.B 11, 1439(1993).
  • R.Hofmann, W.A.Henle, H.Öfner, M.G.Ramsey, F.P.Netzer, W.Braun, und K.Horn ‘‘Physical and Chemical Effects at Rare-Metal-SiO2-Si Structures ‘‘Physical Review B 47, 10407(1993).
  • D.A.Evans und K.Horn ‘‘Ag/GaAs(110) revisited ‘‘J.Elec.Spec.Relat.Phenom. 62, 59(1993).
  • D.A.Evans,M.Alonso, R.Cimino, und K.Horn ‘‘Observation of Quantum Size Effects in Photoemission From Ag Islands on GaAs(110) ‘‘Phys.Rev.Letters 70, 3483(1993).
  • M.von der Emde, D.R.T.Zahn, D.A.Evans und K.Horn ‘‘Electrical in situ Characterisation of Metal/Gallium Phosphide(110) Schottky Contacts ‘‘Proceedings of IVC-12, ‘‘Appl.Surf.Sci. 70/71, 507(1993).
  • Ph.Hofmann, K.Horn, A.M.Bradshaw, D.Fuchs, M.Cardona, und R.L.Johnson ‘‘The Dielectric Function of Cubic and Hexagonal CdS in the Vacuum UV Region ‘‘Phys.Rev. B 47, 1639 (1993).
  • D.A.Evans, G.J.Lapeyre, und K.Horn ‘‘Photoemission observation of Na-induced states in the band gap and evidence for charge transfer in Na/GaP(110) ‘‘Phys.Rev. B 48, 1939(1993).
  • Th.Chassé, M.Alonso, R.Cimino, W.Theis, W.Braun, und K.Horn ‘‘Growth Mode and Temperature dependent Morphology of Indium on GaP(110) ‘‘Appl.Surf.Sci., 64, 329(1993).
  • Ch.Maierhofer, D.R.T.Zahn, D.A.Evans, und K.Horn ‘‘Suppression of Interface reaction and Modification of Band Offset by Sb interlayers in CdS/InP(110) Heterojunctions ‘‘J.Appl..Phys. 73, 4089(1993).
  • D.A.Evans, K.Horn, M.von der Emde, C.Schultz, W.Richter und D.R.T.Zahn ‘‘Schottky barrier height for Na on GaP(110) ‘‘J.Appl. Phys. 72,4486(1992).
  • K.Horn ‘‘Photoemission studies of Semiconductor Interfaces: Electronic Structure and Barrier Heights ‘‘Surface Science 269/270, 938(1992).
  • D.A.Evans, T.P.Chen, Th.Chassé, K.Horn, M. von der Emde, und D.R.T.Zahn ‘‘Investigation of Schottky barrier formation for transition metal overlayers on InP and GaP(110) surfaces ‘‘Surface Science 269/270, 979(1992).
  • A.Klein, C.Pettenkofer, W.Jaegermann, Th.Chassé, K.Horn, M.Ch.Lux-Steiner und E.Bucher ‘‘Interface Reaction of Pt on p-WSe2(0001) surfaces ‘‘Surf.Sci.Lett. 264, L193(1992).
  • K.Horn, M.Alonso, und R.Cimino ‘‘Surface Photovoltage Effects in the Determination of Band Bending and Schottky Barrier Heights by Photoemission ‘‘Appl.Surf.Sci. 56-58, 271(1992).
  • R.Cimino, A.Gearante, M.Alonso, und K.Horn ‘‘Photoemission Study of Non-Equilibrium Effects in Metals on GaAs(110) ‘‘Appl.Surf.Sci. 56-58, 151(1992).
  • D.R.T.Zahn, Ch.Maierhofer, A.Winter, M.Reckzügel, R.Srama, U.Rossow, A.Thomas, K.Horn, und W.Richter ‘‘In-situ Monitoring of Heterostructure Growth by Optical Spectroscopies: CdS on InP(110) ‘‘Appl.Surf.Sci. 56-58, 684(1992).
  • D.A.Evans, T.P.Chen, Th.Chassé, und K.Horn ‘‘The interaction of Pt with GaP(110): interface reaction, band bending and surface photovoltage effects ‘‘Appl.Surf.Sci. 56-58, 233-241(1992).
  • Ch.Maierhofer, D.R.T.Zahn, D.A.Evans, und K.Horn ‘‘Influence of thin metallic interlayers on the valence band offset in CdS/InP(110) ‘‘Appl.Surf.Sci., 56-58, 738 (1992).
  • D.R.T.Zahn,Ch.Maierhofer, A.Winter, M.Reckzügel, R.Srama, A.Thomas, K.Horn, W.Richter ‘‘The Growth of Cubic CdS on InP(110) Studied In Situ by Raman Spectroscopy ‘‘J.Vac.Sci.Technol. B 9, 2206 (1991).
  • Ch.Maierhofer, S.Kulkarni, M.Alonso, T.Reich, und K.Horn ‘‘Valence Band Offset in ZnS layers on Si(111) grown by Molecular Beam Epitaxy ‘‘J.Vac.Sci.Technol. B 9, 2238 (1991).
  • W.A.Henle, M.G.Ramsey, F.P.Netzer, und K.Horn ‘‘Reversible Eu2+ - Eu3+ transitions at the Eu-Si Interface ‘‘Appl.Phys.Lett. 58, 1605(1991).
  • H.Meyer, R.Schulz, H.Suhr C.Haag K.Horn und A.M.Bradshaw ‘‘Metallization Of Polytetrafluoroethylene (PTFE) By Means of Plasma-Enhanced Chemical Vapour Deposition ‘‘in: "Metallized Plastics: Fundamental and Applied Aspects I",ed. K.L.Mittal, Plenum Press New York-London 1992, p. 121 - 130..
  • K.Horn, A.Ortega, K.Doblhofer, A.M.Bradshaw, R.Schulz und H.Meyer ‘‘Surface Pre-treatment and Metal Coating of Commercial Polyimide Studied by Surface Analytical Techniques ‘‘in: "Metallized Plastics: Fundamental and Applied Aspects I", ed. K.L.Mittal, Plenum Press New York-London 1992, p. 283-292.
  • M.Alonso, R.Cimino, und K.Horn ‘‘Surface Photovoltage effects in photoemission from metal-GaP(110) interfaces: temperature-dependent Fermi level movement ‘‘J.Vac.Sci.Technol, A 9, 891(1991 ).
  • Th.Chassé, W.Theis, T.P.Chen, D.A.Evans, K.Horn, C.Pettenkofer, und W.Jägermann ‘‘Interface Chemistry and band bending induced by Pt deposition onto GaP(110) Surface Science 251/252, 472(1991).
  • P.J.W.Weijs, P.A.M. van der Heide, H.Haak, K.Horn, J.F. van Acker, und J.C.Fuggle ‘‘The Ba/Si(100) interface: XPS, BIS, Synchrotron PS and LEED studies of Schottky barrier formation ‘‘Surface Science 260, 102(1992).
  • R.H.J.Kappert, H.R.Borsje, J.F. van Acker, K.Horn, H.Haak, K.H.J.Buschow, und J.C.Fuggle ‘‘Photoemission study of the upper limit to the change of the local exchange splitting at finite temperature ‘‘Phys.Rev. B 43, 3259(1991).
  • J.F.van Acker, P.W.J.Weijs, J.C.Fuggle, K.Horn, H.Haak, und K.H.J.Buschow ‘‘Photoemission investigation of the electronic structure of Fe-Pd and Fe-Pt alloys ‘‘Phys.Rev. B 43, 8903(1991).
  • K.Horn ‘‘Semiconductor interface studies with core and valence level photoemission ‘‘Applied Physics A 51, 289(1990).
  • M.Alonso, R.Cimino. Ch.Maierhofer, Th.Chassé, W.Braun, und K.Horn ‘‘ Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110) ‘‘J.Vac.Sci.Technol. B 8, 955 (1990).
  • W.G.Wilke, Ch.Maierhofer, und K.Horn ‘‘Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well ‘‘J.Vac.Sci.Technol. B 8,760 (1990).
  • M.Alonso, R.Cimino, und K.Horn ‘‘Surface photovoltage effects in photoemission from metal/GaP(110) interfaces ‘‘Phys.Rev.Letters 64, 1947(1990).
  • I.M.Curelaru, K.-S.Din, G.-E.Jang, L.-G.Chen, E.Wall, S.Susman, T.O.Brun, K.J.Volin, E.E.Koch, und K.Horn ‘‘Electronic structure, Bonding and Lithium Migration effects involving the surface of the Mixed Conductor β-LiAl , in: ‘‘"Science and Technology of Fast Ion Conductors", ed. Harry L.Tuller and Minko Balkanski, Plenum Press New York 1989, p.33.
  • W.G.Wilke, R.Seedorf, K.Horn ‘‘Valence band offset and interface chemistry of II-VI epitaxial layers grown on the (110) surface of III-V materials ‘‘J.Crystal Growth 101, 620 (1990).
  • M.Alonso, R.Cimino, Th.Chassé, K.Horn, W.Braun ‘‘Temperature-dependent interface formation study of aluminium on GaP(110) ‘‘Vacuum 43, 1025 (1990).
  • Th.Chassé, M.Alonso, R.Cimino, K.Horn, W.Braun ‘‘Indium interaction with GaP(110): example of an unreacted interface ‘‘Vacuum 43,835 (1990).
  • K.Horn, J.Somers, Th.Lindner, A.M.Bradshaw ‘‘Electronic structure of adsorbed alkali layers on Al(111) determined by valence level photoemission ‘‘in "Alkali Adsorption on Metals and Semiconductors", eds. H.P.Bonzel, A.M.Bradshaw, and G.Ertl, Elsevier (Amsterdam) 1989.
  • W.G.Wilke, V.Hinkel, W.Theis, K.Horn ‘‘Surface shifts in core level photoemission from InP(110): experiments and model calculations ‘‘Phys.Rev. B 40, 9824 (1989).
  • K.Horn, A.Hohlfeld, J.Somers, Th.Lindner, P.Hollins und A.M.Bradshaw ‘‘Reply to: Comment on "Identification of the s-derived valence-electron level in photoemission from alkali metal adlayers on aluminium" by H.Ishida ‘‘Phys.Rev.Letters 63,1535(1988).
  • W.G.Wilke, R.Seedorf, K.Horn ‘‘Valence band offset and interface chemistry of CdS/InP(110) ‘‘J.Vac.Sci.Technol. B 7, 807(1989).
    * Th.Chasse, W.G.Wilke, K.Horn ‘‘Chemical reactions and temperature-dependent interface formation of Ti/InP(110) Surface and Interface Analysis 14,315(1989).
  • K.Horn, A.M.Bradshaw, K.Doblhofer, S.Krause, G.Weinberg, H.-M.Seidenspinner und R.Schulz ‘‘A study of copper-coated polyimide by scanning electron microscopy, core level photoemission, EDX, and infrared reflection absorption spectroscopy ‘‘Fresenius Zeitschrift für Analytische Chemie (1989) 333,590.
  • J.F.van Acker, P.W.J.Weijs, J.C.Fuggle, K.Horn, W.G.Wilke, H.Haak, H.Saalfeld, H.Kuhlenbeck, W.Braun, G.P.Williams, D.Wesner, M.Strongin, S.Krummacher, K.H.J.Buschow ‘‘The electronic structure of Fe, Co, and Ni impurities in Pd ‘‘Phys.Rev.B 38,10463(1988)..
  • A.Hohlfeld und K.Horn ‘‘LEED, ΔΦ and electron energy loss studies of adsorbed alkali layers on Al(111) Surface Science 211, 844 (1989).
  • K.Horn, A.Hohlfeld, J.Somers, Th.Lindner, P.Hollins und A.M.Bradshaw ‘‘Identification of the s-derived valence-electron level in photoemission from alkali metal adlayers on aluminium ‘‘Phys.Rev.Letters 61,2488(1988).
  • V.Hinkel, H.Haak, C.Mariani, L.Sorba, K.Horn und N.E.Christensen ‘‘Band structure determination of PbSe and PbTe by angle-resolved photoemission Physical Review B 40, 5549 (1989).
  • W.G.Wilke und K.Horn ‘‘Valence band offset and interface formation in ZnTe/GaSb(110) studied by photoemission using synchrotron radiation ‘‘J.Vac.Sci.Technol. B 6,1211(1988).
  • D.Heskett, K.-H.Frank, K.Horn, E.E.Koch, H.-J.Freund, A.Baddorf, K.-D.Tsuei, und E.W.Plummer ‘‘Correlation between electron loss and inverse photoemission measurements of alkali metals on metal surfaces ‘‘Phys. Rev.(Rapid Comm.) B 37,10387(1988).
  • I.M.Curelaru, K.-S.Din, G.-E.Jang, L.-G.Chen, E.Wall, S.Susman, T.O.Brun, K.J.Volin, E.E.Koch, K.Horn, J.Ghijsen und R.L.Johnson ‘‘Experimental studies of the electronic structure of I-II and I-III intermetallic compounds with B32 (Zintl) structure ‘‘J.Vac.Sci.Technol. A 5,2038(1987).
  • K.C.Prince, K.Dückers, K.Horn und V.Chab ‘‘Orientation of molecular oxygen on Pt(110) ‘‘Surface Science 200,L451 (1988).
  • A.B.McLean,I.T.McGovern,C.Stephens, K.Horn, W.G.Wilke, H.Haak und W.Braun ‘‘The dependence of core level photoemission spectra on interface growth mode: Al on InP(110) ‘‘Phys.Rev.(Rapid Comm.)B 38,6330(1988).
  • V.Hinkel, L.Sorba, H.Haak, K.Horn, und W.Braun ‘‘Reply to: Comment on "evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)" ‘‘Appl.Phys.Lett. 52, 2269(1988).
  • C.Stephens, G.J.Hughes, I.T.McGovern, A.B.McLean, D.R.T.Zahn, R.H.Williams, W.Braun, R.Cimino, W.Wilke, H.Haak und K.Horn ‘‘Thermal effects in Aluminium-Semiconductor Interface Formation ‘‘Vacuum 38,329(1988).
  • K.Bange, G.Weinberg, S.Krause und K.Horn ‘‘Characterization of layers produced by a reactive deposition technique: an EDAX and ESCA study ‘‘Fresenius Zeitschrift für Analytische Chemie 329,400 (1987).
  • K.Dückers, K.C.Prince, H.P.Bonzel, V.Chab und K.Horn ‘‘Adsorption induced surface core level shifts of Pt(110) ‘‘Phys.Rev. B 36,6292(1987).
  • J.W.M.Frenken, R.L.Krans, J.F. van der Veen, E.Holub-Krappe und K.Horn ‘‘Missing row reconstruction of Ag(110) induced by potassium reconstruction ‘‘Phys.Rev.Letters 59,2307(1987).
  • L.Sorba, V.Hinkel und K.Horn ‘‘Surface core level shifts of clean and hydrogen-covered InSb(110) surfaces ‘‘Surface Science 194,597(1988).
  • B.Kessler, A.Eyers, K.Horn, N.Müller, B.Schmiedeskamp, G.Schönhense und U.Heinzmann ‘‘Determination of Xenon valence and conduction bands using spin-polarised photoemission ‘‘Phys.Rev.Letters 59,331(1987).
  • E.Holub-Krappe, K.Horn, J.M.W.Frenken, R.L.Krans, und J.F. van der Veen ‘‘Multilayer relaxation at the Ag(110) surface ‘‘Surface Science 188,335(1987).
  • K.H.Frank, K.Horn, J.Wilder und E.E.Koch ‘‘Unoccupied electronic levels and conduction band structure of Xenon probed by Inverse Photoemission ‘‘Applied Physics A 44,97(1987).
  • L.Sorba, V.Hinkel, H.U.Middelmann, und K.Horn ‘‘Bulk and surface band structure of InP determined by photoemission from InP(110) ‘‘Phys.Rev. B 36,8075(1987).
  • V.Hinkel,L.Sorba, H.Haak, K.Horn und W.Braun ‘‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111) ‘‘Appl.Phys.Lett.50,1257(1987).
  • A.Hohlfeld, M.Sunjic und K.Horn ‘‘The electronic structure of Cs adsorbed on Al(111) ‘‘J.Vac.Sci.Technol. A 5,679(1987).
  • K.Horn, S.Krause, G.Weinberg und K.Bange ‘‘Study of protective coatings containing Zirconium using electron spectroscopy for chemical analysis ‘‘Thin Solid Films 150,41(1987).
  • H.U.Middelmann, L.Sorba, V.Hinkel und K.Horn ‘‘Determination of bulk and surface band structure of a-Sn by angle-resolved photoemission ‘‘Phys. Rev. B 35,718(1987).
  • L.Sorba, H.-U.Middelmann, V.Hinkel, und K.Horn ‘‘Photoemission studies of band structure and core levels of clean and adsorbate-covered surfaces ‘‘Vuoto 16, 43 (1986).
  • N.Spielberg,Z.Luz,R.Poupko,K.Praefcke,B.Kohne,J.Prichard, und K.Horn ‘‘The crystal and mesophase structure of hexakis-(alkylsulfono)-benzene homologues by x-ray diffractometry ‘‘Z.Naturforschung 41a, 855 (1986).
  • K.Horn, K.H.Frank, J.A.Wilder, und B.Reihl ‘‘Observation of final state screening in Inverse Photoemission from adsorbed Xe layers ‘‘Phys.Rev.Letters 57,1064(1986).
  • E.Holub-Krappe, K.C.Prince, K.Horn, und D.P.Woodruff ‘‘X-ray photoelectron diffraction determination of the molecular orientation of CO and Methoxy adsorbed on Cu(110) ‘‘Surface Science 173, 176 (1986).
  • H.U.Middelmann, L.Sorba, und K.Horn ‘‘Valence band structure determination of InSb by angle-resolved photoemission ‘‘Phys.Rev. B 34, 957 (1986).
  • T.Mandel, M.Domke, G.Kaindl, C.Laubschat, M.Prietsch, H.-U.-Middelmann, und K.Horn ‘‘Core level binding energies and Auger electron energies in epitaxial rare gas layers on graphite(001) ‘‘Surface Science 162, 453 (1985).
  • K.C.Prince, E.Holub-Krappe, K.Horn und D.P.Woodruff ‘‘Precise molecular orientation for adsorbates using x-ray photoelectron diffraction: Methoxy (CH3O) and CO on Cu(110) ‘‘Phys.Rev.(Rapid Comm.) B 32, 4249 (1985).
  • K.C.Prince, E.Holub-Krappe, G.Paolucci, K.Horn und D.P.Woodruff ‘‘Determination of adsorbate orientation by x-ray photoelectron diffraction ‘‘Proceedings of the X84 Conference on X-ray Absorption And Inner Shell Processes, ed. A.Meisel and J.Finster Leipzig 1984, p. 479.
  • S.Krause, C.Mariani, K.C.Prince und K.Horn ‘‘Screening effects in photoemission from weakly bound adsorbates: CO on Ag(110) ‘‘Surface Science 138, 305 (1984).
  • K.Horn, B.Reihl, A.Zartner, D.E.Eastman, K.Hermann und J.Noffke ‘‘Electronic energy bands of lead: angle-resolved photoemission and band structure calculations ‘‘Phys.Rev. B 30, 1711 (1984).
  • D.P.Woodruff und K.Horn ‘‘The surface structure of a-Sn(100) ‘‘Phil. Mag. A 47,L5 (1983).
  • K.C.Prince, G.Paolucci, A.M.Bradshaw, K.Horn und C.Mariani ‘‘Oxygen adsorption on Ag(110): observation of a precursor state ‘‘Vacuum 33, 867 (1983).
  • W.Griebenow, B.Werthmann, D.Treu, K.Horn und S.Krause ‘‘Zur Identifizierung von Tinten auf alten Handschriften ‘‘Maltechnik Restauro 3, 208 (1983).
  • D.P.Woodruff und K.Horn ‘‘The surface structure of a-Sn(100) and the effect of hydrogen adsorption ‘‘Vacuum 33, 633(1983).
  • T.Mandel, G.Kaindl, K.Horn, M.Iwan, H.-U.Middelmann und C.Mariani ‘‘ Layer-dependent shifts in ionisation potential and Auger energies for Kr/Cu(110) ‘‘Solid State Commun. 46, 713 (1983).
  • C.Mariani und K.Horn ‘‘Orientation of water adsorbed on Cu(110) ‘‘Surface Science 126, 279(1983).
  • S.Krause, K.Horn, W.Griebenow und F.Werthmann ‘‘Bestimmung der Tintenart in alten Handschriften mittels ESCA ‘‘MPG-Spiegel, Aktuelle Informationen Ausgabe 6/1982 S. 22.
  • C.Mariani, H.-U.Middelmann, M.Iwan und K.Horn ‘‘On the origin of satellite peaks in valence photoemission from CO on Cu(110) ‘‘Chem.Phys.Lett. 93,308 (1982).
  • J.W.Gadzuk, S.Holloway, C.Mariani und K.Horn ‘‘Temperature-dependent photoemission line shapes of physisorbed xenon ‘‘Phys.Rev.Letters 48,1288(1982).
  • C.Mariani, K.Horn und A.M.Bradshaw ‘‘Photoemission studies of the commensurate-incommensurate transition in the system Xe/Cu(110) ‘‘Phys.Rev. B 25,779(1982).
  • K.Horn, J.DiNardo, W.Eberhardt, H.-J.Freund und E.W.Plummer ‘‘The adsorption of N2: chemisorbed on Ni(110) and physisorbed on Pd(111) ‘‘Surface Science 118, 465(1982).
  • K.Horn, C.Mariani und L.Cramer ‘‘Krypton and Argon on Cu(110): Geometric and electronic structure ‘‘Surface Science 117, 376 (1982).
  • P.Hofmann, K.Horn und A.M.Bradshaw ‘‘Orientation of adsorbed benzene from angle-resolved photoemission measurements ‘‘Surface Science 105, L620 (1981).
  • W.Eberhardt, E.W.Plummer, K.Horn und J.Erskine ‘‘Magnetic exchange splitting of electronic surface state on Ni(110) ‘‘Phys.Rev.Letters 45, 273(1980).
  • A.Ortega, F.M.Hoffmann, W.Stenzel, A.Garbout, R.Unwin und K.Horn ‘‘An IR and EELS study of adsorption of CO on Pd(100) ‘‘Le Vide, Les couches minces Suppl. 201, 335(1980).
  • P.Hofmann, C.Mariani, K.Horn und A.M.Bradshaw ‘‘The characterisation of intermediates in surface reactions: the methoxy and formate species on Cu(100) ‘‘Le Vide, Les couches minces Suppl. 201, 541(1980).
  • K.Horn ‘‘Schwingungsspektroskopie von Adsorbaten auf Metall-Einkristall-Oberflächen ‘‘Nova Acta Leopoldina 1980.
  • R.Unwin, K.Horn und P.Geng ‘‘Photoemission from rare gas monolayers on Pd(100) ‘‘Vakuum-Technik 29,149(1980).
  • K.Hermann, J.Noffke und K.Horn ‘‘Lateral interactions in rare gas monolayers: Band structure models and photoemission experiments ‘‘Phys.Rev. B 22, 1022 (1980).
  • K.Horn, N.V.Richardson, A.M.Bradshaw und J.K.Sass ‘‘Adsorbate-induced resonances observed in photoemission from a c(2 x 2) sulphur overlayer on Pd(100) ‘‘Solid State Comm. 32, 161 (1979).
  • I.P.Batra, K.Hermann, A.M.Bradshaw und K.Horn ‘‘Theoretical and experimental studies of band formation on CO adlayers ‘‘Phys.Rev. B 20, 801(1979).
  • P.Hofmann, C.v.Muschwitz, K.Horn, K.Jacobi, A.M.Bradshaw, und M.Scheffler ‘‘Angular-resolved photoemission from an ordered oxygen overlayer on Al(111) ‘‘Surface Science 89, 327(1979).
  • K.Horn ,A.M.Bradshaw, K.Hermann und I.P.Batra ‘‘Adsorbate band formation: the chemisorption of CO on Pd(100) ‘‘Solid State Commun. 31,257(1979).
  • K.Horn und A.M.Bradshaw ‘‘Photoemission from single crystal xenon ‘‘ Solid State Commun. 30,545(1979).
  • P.Hofmann, K.Horn, A.M.Bradshaw und K.Jacobi ‘‘The adsorption and condensation of oxygen on Aluminium at low temperature ‘‘Surface Science 82,L610 (1979).
  • M.Scheffler, K.Horn, A.M.Bradshaw und K.Kambe ‘‘Angular-resolved photoemission from physisorbed xenon ‘‘Surface Science 80,69(1979).
  • K.Horn ‘‘IR reflection-absorption spectroscopy of mono- and multilayers of ethane on Pt(111) Proceedings of the Int1ernational Conference "Vibrations in adsorbed layers" KFA Jülich June 1978, p. 140.
  • K.Horn, M.Scheffler und A.M.Bradshaw ‘‘Photoemission from physisorbed Xenon: evidence for lateral interactions ‘‘Phys.Rev.Lett. 41,822(1978).
  • K.Horn, A.M.Bradshaw und K.Jacobi ‘‘Angular-resolved UPS studies of the chemisorption of ethylene and acetylene on Ni(100) ‘‘J.Vac.Sci.Technol.15, 575(1978).
  • K.Horn, A.M.Bradshaw und K.Jacobi ‘‘Angular resolved UV photoemission from ordered layers of CO on a Ni(100) surface ‘‘Surface Science 72, 719(1978).
  • J.K.Sass, H.J.Lewerenz, E.Piltz und K.Horn ‘‘Photoemission yield study with polarised light at normal incidence: crystal symmetry effects below the direct transition threshold ‘‘J.Phys. C 11, L 51 (1978).
  • K.Horn und J.Pritchard ‘‘IR spectra of ordered and disordered overlayers on metals: CO on a Pt(111) single crystal surface ‘‘J.Physique 38, C4-164(1977).
  • K.Horn, M.Hussain und J.Pritchard ‘‘The adsorption of CO on Cu(110) ‘‘Surface Science 63, 244(1977).
  • K.Horn und J.Pritchard ‘‘IR spectrum of CO chemisorbed on Cu(100) ‘‘Surface Science 55, 701(1976).
  • K.Horn und J.Pritchard ‘‘Wavelength-modulated IR absorption spectroscopy: ethane adsorbed on Cu(110) ‘‘Surface Science 52, 437(1975).
  • H.Ibach, K.Horn, R.Dorn und H.Lüth ‘‘The adsorption of oxygen on silicon (111) surfaces ‘‘Surface Science 38,433(1973).

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